BSIM3v3 Characterization and Simulation of MOS Si1 – xGex Transistors with 130 nm Submicron Technology

Автор(ы) M. Hebali1,2, M. Bennaoum1, M. Benzohra3, D. Chalabi2, A. Saïdane2
Принадлежность

1Department of Electrotechnical, University Mustapha STAMBOULI Mascara, 29000 Mascara, Algeria

2Laboratory: CaSiCCe, ENP Oran-MA, 31000 Oran, Algeria

3Department of Networking and Telecommunications, University of Rouen, Laboratory LECAP, 76000, France

Е-mail mourad.hebali@univ-mascara.dz
Выпуск Том 11, Год 2019, Номер 4
Даты Получено 13 февраля 2019; в отредактированной форме 02 августа 2019; опубликовано online 22 августа 2019
Ссылка M. Hebali, M. Bennaoum, M. Benzohra, et al., J. Nano- Electron. Phys. 11 No 4, 04021 (2019)
DOI https://doi.org/10.21272/jnep.11(4).04021
PACS Number(s) 85.30.Tv
Ключевые слова Si1 – Gex, BSIM3v3, 130 nm technology, I-V characterization, Temperature (40) .
Аннотация

A prospective of work and a feasibility study are undertaken on MOSi1 – xGex transistors with a 130 nm submicron technology. BSIM3v3 model has been used to analyze the transistors’ operation, according to the study of the effect of Germanium fraction x (x ( 0 to x ( 1) on electrical performance of these transistors taking into account the influence of temperature. PSpice parameters of two different transistors NMOS1 – xGex and PMOS1 – xGex have been calculated and used in the modeling. The output and transfer electrical characteristics have been determined in the temperature range – 200 to 200 °C. The regime sub-threshold was also addressed by calculating ION and IOFF currents as a function of VGS for constant VDD. Simulation results show that the above transistors work properly in a regime under a threshold voltage of about 1.2 V. They can be used in low voltage and low power microelectronics by controlling the germanium x fraction.

Список литературы