Extraction of Diode’s Electrical Parameters under Forward and Room Temperature Conditions in an InAsSb Based Device

Автор(ы) K. Mahi, B. Messani, H. Aït-Kaci

Laboratoire de Physique des Plasmas, Matériaux Conducteurs et leurs Applications (LPPMCA), Faculté de Physique, Département de Physique Energétique, Université des Sciences et de la Technologie d'Oran Mohamed Boudiaf, USTO-MB, BP 1505, El M'naouer, 31000 Oran, Algérie

Е-mail mahikhalidou@yahoo.fr
Выпуск Том 11, Год 2019, Номер 4
Даты Получено 12 мая 2019; в отредактированной форме 02 августа 2019; опубликовано online 22 августа 2019
Ссылка K. Mahi, B. Messani, H. Aït-Kaci, J. Nano- Electron. Phys. 11 No 4, 04030 (2019)
DOI https://doi.org/10.21272/jnep.11(4).04030
PACS Number(s) 61.72.uj, 61.82.Bg, 61.82.Fk
Ключевые слова InAsSb, I-V characteristic (3) , Series resistance, Ideality factor (10) , Saturation current, Diffusion process.

In semiconductor based components using p-n junctions, simple heterojunctions or other different semiconducting systems, the current-voltage (I-V) characteristic is of great importance since it provides information about the device operation, performances and charge transport processes occurring in the structure of device. From a forward I-V characteristic, key electrical parameters related to the device operation like series resistance (Rs), saturation current (Is) and ideality factor (n) can be derived. The extraction of correct values of these three parameters, which remains an open problem, is sometimes difficult and particularly when the device exhibits an important series resistance effect. This effect often causes a non-ideal or non-exponential I-V behavior of the component. To extract accurate values of Rs, n and Is from a room temperature and forward I-V curve measured on diodes based on the GaAlAsSb(p)/GaAlAsSb(n)/InAsSb(n) double interface, we used a technique encountered in the literature. This technique consists in using external resistors connected in series to the device during measurements. To derive the value Rs of the device and then to extract accurate values of n and Is, a simple mathematical approach for the data treatment is adopted. This approach is first applied to simulated I-V data, then to I-V characteristics measured on our mesa diodes. The results obtained for both simulated and measured characteristics are compared to those obtained by using other approaches encountered in the literature. According to the values obtained for the electrical parameters of our device, the hole diffusion process from InAsSb towards the barrier GaAlAsSb seems to be responsible for the current flow in our structure. The latter result is in agreement with results published by other authors and which are related to semiconducting system similar to ours.

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