Analytical Estimate of Open-Circuit Voltage of a Schottky-Barrier Solar Cell Under High Level Injection

Автор(ы) Pramila Mahala1, Sanjay Kumar Behura2, A. Ray1
Принадлежность
1 School of Solar Energy, Pandit Deendayal Petroleum University, Raisan, Gandhinagar 382 007, Gujarat, India
2 Solar Energy Research Wing, Gujarat Energy Research and Management Institute-Research, Innovation and Incubation Center (GERMI-RIIC), Gandhinagar 382 007, Gujarat, India
Е-mail sanjay.b@germi.res.in
Выпуск Том 3, Год 2011, Номер 1, Part 5
Даты Received 04 February 2011, in final form 01 December 2011, published online 08 December 2011
Ссылка Pramila Mahala, Sanjay Kumar Behura, A. Ray, J. Nano- Electron. Phys. 3 No1, 979 (2011)
DOI
PACS Number(s) 73.30.+y
Ключевые слова Schottky barrier solar cell, High level injection, Open circuit voltage (2) , Ohmic contact (5) , Surface recombination velocity.
Аннотация
The open-circuit voltage developed across a Schottky-Barrier (SB) solar cell was theoretically modeled to estimate it under high level injection conditions. An Open-circuit voltage (Voc) of 0.709 V was obtained for specific metal/n-Si SB solar cell. A substantial increase of 42.6 % in Voc was noticed while comparing our result with that previously calculated in low level injection conditions. Four different metals suitable for making Schottky contact with n-Si were investigated and calculated the variation of Voc with different values of doping concentrations in the semiconductor. The effect of surface recombination velocities (SRV) of charge carriers on Voc was also estimated at such high level injections.

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