Gate Leakage Current Reduction With Advancement of Graded Barrier AlGaN/GaN HEMT

Автор(ы) Palash Das , Dhrubes Biswas
Принадлежность
Indian Institute of Technology Kharagpur, Kharagpur, West Bengal 721302, India
Е-mail d.palash@gmail.com
Выпуск Том 3, Год 2011, Номер 1, Part 5
Даты Received 04 February 2011, published online 08 December 2011
Ссылка Palash Das, Dhrubes Biswas, J. Nano- Electron. Phys. 3 No1, 972 (2011)
DOI
PACS Number(s) 81.05.Ea, 73.61.Ey, 77.84.Bw, 71.10.Ca
Ключевые слова GaN (31) , AlGaN (4) , HEMT (3) , 2DEG, Critical thickness, Graded barrier, Gate Leakage current.
Аннотация
The gate leakage current reduction solution of AlGaN/GaN HEMT device issue has been addressed in this paper with compositional grading of AlGaN barrier layer. This work is also conjugated with the critical thickness limitation of heterostructure material growth. Hence, critical thickness calculation of AlGaN over GaN has been kept in special view. 1D Schrodinger and Poisson solver was used to calculate the 2DEG concentration and effective location to use it in the ATLAS device simulator for the predictions. The proposed Al0.50Ga0.50N/Al0.35Ga0.65N/Al0.20Ga0.80N/GaN HEMT structure exhibits the leakage current of the order of around 15 nA/mm at gate voltage of 1 V.

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