Spatial Redistribution of Interstitial Atoms and Vacancies in Semiconductors under the Influence of Pulsed Laser Irradiation

Автор(ы) R.M. Peleshchak , O.V. Kuzyk , O.O. Dan’kiv
Принадлежность

Ivan Franko Drohobych State Pedagogical University, 24, Ivan Franko St., 82100 Drohobych, Ukraine

Е-mail dankivolesya@ukr.net
Выпуск Том 11, Год 2019, Номер 3
Даты Получено 05 марта 2019; в отредактированной форме 10 июня 2019; опубликовано online 25 июня 2019
Ссылка R.M. Peleshchak, O.V. Kuzyk, O.O. Dan’kiv, J. Nano- Electron. Phys. 11 No 3, 03018 (2019)
DOI https://doi.org/10.21272/jnep.11(3).03018
PACS Number(s) 61.46. – w, 43.35. + d
Ключевые слова Interstitial atoms, Vacancies (4) , Laser irradiation, Deformation (8) , Diffusion (9) .
Аннотация

The theory of self-consistent deformation-diffusion redistribution of dot defects (interstitial atoms and vacancies) in semiconductors under the influence of pulsed laser irradiation is developed. This theory takes into account the diffusion of defects in nonuniformly deformed field (created both by the presence of defects itself and by a gradient of temperature) and non-local interaction between defects and atoms of the matrix. It is established that depending on the intensity of laser irradiation, the temperature of the substrate and the characteristic distance of action of the laser beam, on the surface of the semiconductor or in its depth, self-organized nanostructures of dot defects can be formed. The conducted theoretical calculations are well consistent with the experimental data of other scientific papers.

Список литературы