A Doping Dependent Threshold Voltage Model of Uniformly Doped Short-Channel Symmetric Double-Gate (DG) MOSFET’s

Автор(ы) P.K. Tiwari, S. Dubey, S. Jit
Принадлежность
Department of Electronics Engineering Institute of Technology, Banaras Hindu University, Varanasi-221005, U.P, India
Е-mail sjit.ece@itbhu.ac.in
Выпуск Том 3, Год 2011, Номер 1, Part 5
Даты Received 04 February 2011, published online 08 December 2011
Ссылка P.K. Tiwari, S. Dubey, S. Jit, J. Nano- Electron. Phys. 3 No1, 963 (2011)
DOI
PACS Number(s) 85.30.Tv, 85.30.De
Ключевые слова DG MOSFET (2) , Short-channel effects (2) , Band gap narrowing (2) , Quantum mechanical effects, Threshold voltage (15) .
Аннотация
The paper presents a doping dependent threshold voltage model for the short-channel double-gate (DG) MOSFETs. The channel potential has been determined by solving the two-dimensional (2D) Poisson’s equation using the parabolic potential approximation in the vertical direction of channel. Threshold voltage sensitivity on acceptor doping and device parameters is discussed in detail. The threshold voltage expression has been modified by incorporating the effects of band gap narrowing for highly doped DG MOSFETs. Quantum mechanical corrections have also been employed in the threshold voltage model. The theoretical results have been compared with the ATLASTM simulation results. The present model is found to be valid for acceptor doping variation from 1014 cm–3 to 5 × 1018cm–3.

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