High-k HfO2 Based Metal-Oxide-Semiconductor Devices Using Silicon and Silicon Carbide Semiconductor

Автор(ы) N.P. Maity1, A. Pandey1, S. Chakraborty2, M. Roy2
Принадлежность

1 Mizoram University (A Central University), Dept. of Electronics & Communication Engineering, Tanhril, Aizawl-796009, India

2 Saha Institute of Nuclear Physics, Microelctronics Division, 1/AF, Bidhan Nagar, Kolkata-700 064, India

Е-mail maity_niladri@rediffmail.com
Выпуск Том 3, Год 2011, Номер 1, Part 5
Даты Received 04 February 2011, published online 08 December 2011
Ссылка N.P. Maity, A. Pandey, S. Chakraborty, M. Roy, J. Nano- Electron. Phys. 3 No1, 947 (2011)
DOI
PACS Number(s) 85.30.De, 85.40. – e
Ключевые слова C-V characteristics (3) , HfO2, MOS (47) , Silicon carbide (9) , Flatband capacitance.
Аннотация
In this paper we have calculated the flatband capacitance (CFB) for high-k dielectric material hafnia oxide (HfO2) as an insulator and silicon carbide (SiC) as a semiconductor material for metal-oxide-semiconductor (MOS) devices. We simulate the capacitance-voltage (C-V) characteristics of the MOS devices with ultrathin oxide using ATLAS, a commercially available TCAD tool from SILVACO. The tool has investigated the effect on C-V characteristics of different oxide thickness and doping concentration of SiO2 and HfO2 as insulators and Si and SiC as semiconductor based MOS devices. Excellent agreement was observed over a wide range of oxide thickness and substrate doping for the materials. The C-V characteristics of different polytype of SiC semiconductor also studied for n-type MOS devices.

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