Designing Single Chamber Hwcvd System for High Deposition Rate Device Quality A-Si:h Thin Films and Solar Cells

Автор(ы) N.A. Wadibhasme, S.K. Soni , Alka Kumbhar, Nagsen Meshram, R.O. Dusane
Принадлежность
Indian Institute of Technology Bombay Powai, 400076, Mumbai, India
Е-mail rodusane@iitb.ac.in
Выпуск Том 3, Год 2011, Номер 1, Part 5
Даты Received 04 February 2011, in final form 02 December 2011, published online 08 December 2011
Ссылка N.A. Wadibhasme, S.K. Soni, Alka Kumbhar, et al., J. Nano- Electron. Phys. 3 No1, 942 (2011)
DOI
PACS Number(s) 73.50.Pz, 82.80.Gk, 84.60.Jt
Ключевые слова Hydrogenated amorphous silicon (3) , HWCVD (3) , FTIR (22) , Raman spectroscopy (18) , Dark and photoconductivity (2) .
Аннотация
A new single chamber HWCVD with vertically mounted substrates and filaments has been designed for depositing device quality a-Si:H films with high deposition rate. Optimization studies on films deposited in this chamber under a variety of deposition conditions yielded uniform films at more than 7Å/sec deposition rate and with very low oxygen content. These films show a photoconductivity gain of more than 105. The working pressure has been kept quite low at 15 mtorr compared to earlier studies. i-layers of a p-i-n single junction solar cells were deposited on the TCO (Asahi-U type) glass in this reactor. The initial p-layer and the final n-layer were deposited in another system with separate chambers for these doped layers thus exposing the p-layer as well as the i-layer to the atmosphere during the transfer. Using this optimized intrinsic layer, a-Si:H based p-i-n solar cell showed a conversion efficiency of 4.7 %.

Список литературы