Physical Features of Double Sided Diffusion of Lithium into Silicon for Large Size Detectors

Автор(ы) R.A. Muminov1 , A.K. Saymbetov2 , N.M. Japashov2 , Yo.K. Toshmurodov1, S.A. Radzhapov1 , N.B. Kuttybay2, M.K. Nurgaliyev2
Принадлежность

1Physico-Technical Institute of the Academy of Sciences of Uzbekistan, Tashkent 100084, Uzbekistan

2Al-Farabi Kazakh National University, Almaty 050000, Kazakhstan

Е-mail asaymbetov@kaznu.kz
Выпуск Том 11, Год 2019, Номер 2
Даты Получено 26 декабря 2018; в отредактированной форме 03 апреля 2019; опубликовано online 15 апреля 2019
Ссылка R.A. Muminov, A.K. Saymbetov, N.M. Japashov, и др., J. Nano- Electron. Phys. 11 No 2, 02031 (2019)
DOI https://doi.org/10.21272/jnep.11(2).02031
PACS Number(s) 6170T, 6610C, 7630D
Ключевые слова Si(Li) detectors, Li diffusion, Double sided diffusion.
Аннотация

In this paper, we propose a new method for double sided diffusion of lithium ions into a monocrystalline silicon wafer for the further fabrication of Si (Li) p-i-n nuclear radiation detectors with a diameter of the sensitive surface of more than 110 mm and a thickness of the sensitive region of more than 4 mm. It was found that the optimal regime for lithium diffusion into large-diameter silicon is at a temperatureof T = (450 ± 20) ºC, time t = 3 min, thickness hLi = (300 ± 10) mm. The theoretical assumptions and experimental characteristics of double sided diffusion are considered. As initial material the dislocation free monocrystalline cylindrical silicon crystal of the p-type, obtained by the floating-zone method (with a diameter 110 mm, thickness 8-10 mm, resistivity  ρ = 1000 ÷ 10000 Ohm·cm and life time τ ≥ 500 μs) and the silicon crystal of the p-type (with a diameter of 110 mm, resistivity  ρ = 10 ÷ 12 Ohm·cm, lifetime τ ≥ 50 μs, grown in an argon atmosphere) obtained by the Czochralski method were used. Correspondingly, the technological processes of mechanical and chemical processing of semiconductor wafers based on silicon of a large area have been improved.

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