Physical Features of Double Sided Diffusion of Lithium into Silicon for Large Size Detectors

Автор(ы) R.A. Muminov1, A.K. Saymbetov2, N.M. Japashov2, Yo.K. Toshmurodov1, S.A. Radzhapov1, N.B. Kuttybay2, M.K. Nurgaliyev2
Принадлежность

1Physico-Technical Institute of the Academy of Sciences of Uzbekistan, Tashkent 100084, Uzbekistan

2Al-Farabi Kazakh National University, Almaty 050000, Kazakhstan

Е-mail asaymbetov@kaznu.kz
Выпуск Том 11, Год 2019, Номер 2
Даты Получено 26 декабря 2018; в отредактированной форме 03 апреля 2019; опубликовано online 15 апреля 2019
Ссылка R.A. Muminov, A.K. Saymbetov, N.M. Japashov, и др., J. Nano- Electron. Phys. 11 No 2, 02031 (2019)
DOI https://doi.org/10.21272/jnep.11(2).02031
PACS Number(s) 6170T, 6610C, 7630D
Ключевые слова Si(Li) detectors, Li diffusion, Double sided diffusion.
Аннотация

In this paper, we propose a new method for double sided diffusion of lithium ions into a monocrystalline silicon wafer for the further fabrication of Si (Li) p-i-n nuclear radiation detectors with a diameter of the sensitive surface of more than 110 mm and a thickness of the sensitive region of more than 4 mm. It was found that the optimal regime for lithium diffusion into large-diameter silicon is at a temperatureof T = (450 ± 20) ºC, time t = 3 min, thickness hLi = (300 ± 10) mm. The theoretical assumptions and experimental characteristics of double sided diffusion are considered. As initial material the dislocation free monocrystalline cylindrical silicon crystal of the p-type, obtained by the floating-zone method (with a diameter 110 mm, thickness 8-10 mm, resistivity  ρ = 1000 ÷ 10000 Ohm·cm and life time τ ≥ 500 μs) and the silicon crystal of the p-type (with a diameter of 110 mm, resistivity  ρ = 10 ÷ 12 Ohm·cm, lifetime τ ≥ 50 μs, grown in an argon atmosphere) obtained by the Czochralski method were used. Correspondingly, the technological processes of mechanical and chemical processing of semiconductor wafers based on silicon of a large area have been improved.

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