Manufacturing Practices for Silicon-Based Power Diode in Fast Recovery Applications

Автор(ы) N. Harihara Krishnan1, N. Anandarao1, Vikram Kumar Yadav1, K.N. Jayaraman1, Ganesh Sanjeev2
Принадлежность

1 Semiconductors and Photovoltaics Department, Bharat Heavy Electricals Limited, Mysore Road, Bangalore 560026, India

2 Microtron Center, Department of Studies in Physics, Mangalore University, Mangalore

Е-mail hariharakn@bheledn.co.in
Выпуск Том 3, Год 2011, Номер 1, Part 5
Даты Received 04 February 2011, published online 08 December 2011
Ссылка N. Harihara Krishnan, N. Anandarao, Vikram Kumar Yadav, et al., J. Nano- Electron. Phys. 3 No1, 914 (2011)
DOI
PACS Number(s) 85.30. – z, 66.30.Lw
Ключевые слова Semiconductor devices, Fast recovery diodes, Electron irradiation (2) , Gold diffusion, Reverse recovery characteristics (2) .
Аннотация
This paper reports a fast recovery semiconductor diode that was developed for use in high power applications. The diode constructed in disc-type ceramic package with a peak-inverse voltage rating of 2800 V and current rating of 710 A was fabricated using float-zone (FZ) silicon wafer as the starting raw material. Alternate processes viz. gold diffusion, gamma irradiation and electron irradiation were explored for control of carrier lifetime required to tune the switching response of the diode to the desired value of 8 μs. The paper compares the results of these alternate processes. The diodes were fabricated and tested for forward conduction, reverse blocking and switching characteristics. The measured values were observed to be comparable with the design requirements. The paper presents an overview of the design, manufacturing and testing practices adopted to meet the desired diode characteristics and ratings.

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