X-ray Investigation of SiC Nanostructure on Cu Films

Автор(ы) G.S. Suyundykova1,2, B.Z. Mansurov1, G. Partizan1,2, K. Kenzhegulov1, B.S. Medyanova1,2, B.A. Aliev2, Zh.T. Nakysbekov2, B.E. Zhumadilov1,2

1Center of Innovative Technologies at the Institute of Combustion Problems, 20, PolezhaevSt., 050050 Almaty, Kazakhstan

2Al-Farabi Kazakh National University, 71, al-Farabi Ave., 050040 Almaty, Kazakhstan

Е-mail sgserikkalievna@gmail.com
Выпуск Том 11, Год 2019, Номер 2
Даты Получено 22 октября 2018; в отредактированной форме 02 апреля 2019; опубликовано online 15 апреля 2019
Ссылка G.S. Suyundykova, B.Z. Mansurov, G. Partizan, et al., J. Nano- Electron. Phys. 11 No 2, 02002 (2019)
DOI https://doi.org/10.21272/jnep.11(2).02002
PACS Number(s) 81.10.Bk, 81.15.Gh
Ключевые слова Silicon carbide (9) , Chemical vapor deposition (2) , Microwave plasma, Method of scanning Electron microscopy, X-rayanalysis.

This article presents the X-ray investigation results of the silicon carbide nanostructures which were synthesized by the method of Microwave Enhanced Chemical Vapor Deposition (MWCVD). The copper films deposited by the method of magnetron sputtering were used as catalysts. The experiments were performed at different temperatures from 600 to 900°C (in 100°C increments). SEM studies of the samples showed that the nanostructures have a diameter of 180-400nm and a length from 670 nm to 1.5 microns. It is also seen from SEM studies that synthesized nanostructures have a rough surface. Analysis of the results of experiments on the synthesis of silicon carbide nanostructures using the MWCVD method shows that the growth of nanostructures starts from 700 °C. It should be emphasized that the intensity of the SiC peak increases with increasing synthesis temperature. Moreover, with increasing synthesis temperature it can be noticed that the next reflection peaks characteristic of silicon carbide appear. The results of X-ray analysis showed that samples grown at a temperature of 900 °C have the highest crystallinity. The results of research using the methods of SEM and X-ray demonstrated that, in the course of experiments, in addition to silicon carbide nanostructures, various carbon formations were obtained. Thus, at a temperature of 600 °C, amorphous carbon films are formed, while at 700 °C nanostructures of silicon carbide are formed.

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