Surface States and Photoluminescence From Porous Silicon
| Автор(ы) | Md. Nazrul Islam1, Satyendra Kumar2 |
| Принадлежность | 1 System Reliability Area, Space Applications Centre (ISRO), Jodhpur Tekra, Ambawadi Vistar P.O., Amhedabad – 380058, India
2 Department of Physics, Indian Institute of Technology, Kanpur Kanpur – 208016, India |
| Е-mail | nazrul@sac.isro.gov.in |
| Выпуск | Том 3, Год 2011, Номер 1, Part 5 |
| Даты | Received 04 February 2011, published online 08 December 2011 |
| Ссылка | Md. Nazrul Islam, Satyendra Kumar, J. Nano- Electron. Phys. 3 No1, 910 (2011) |
| DOI | |
| PACS Number(s) | 78.55.Mb, 78.67.Bf |
| Ключевые слова | Porous silicon (3) , Photoluminescence (17) , Quantum confinement (5) , Surface states, Raman scattering (4) . |
| Аннотация |
Photoluminescence (PL) spectra of freshly electrochemically etched porous silicon layers anodized under various condition have been measured and analyzed according to quantum confinement (QC) model and surface state models. The results support the combination of QC and surface state models for visible PL from fresh PS layers. |
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Список литературы |
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