Absorption and Luminescence of Hydrogen and Oxygen Passivated Silicon Quantum Dots

Автор(ы) C. Rajesh1, S. Mahamuni1, S.V. Ghaisas2
Принадлежность

1 Department of Physics, University of Pune, Ganeshkhind, 411007, Pune, India

2 Department of Electronic Science, University of Pune, Ganeshkhind, 411007, Pune, India

Е-mail svg@electronics.unipune.ac.in
Выпуск Том 3, Год 2011, Номер 1, Part 5
Даты Received 04 February 2011, published online 08 December 2011
Ссылка C. Rajesh, S. Mahamuni, S.V. Ghaisas, J. Nano- Electron. Phys. 3 No1, 903 (2011)
DOI
PACS Number(s) 78.67.Hc, 78.55.Ap, 78.67. – n, 78.55. – m
Ключевые слова IV Semiconductor, Photoluminescence (17) , UV-Vis absorption (2) , Nanoparticles (68) , Photovoltaics (4) .
Аннотация
Silicon (Si) quantum dots (QDs) passivated with oxygen and hydrogen of size 1 nm in diameter are prepared by wet chemical route and electrochemical route respectively. The optical measurements reveal the strong absorption feature around 4.7 eV and weak absorption at 3.4 eV for oxygen passivated Si QDs. Hydrogen passivated Si QDs of the same size show absorption at 4.9 eV. Both the oxygen and hydrogen passivated Si QDs show broad luminescence around 3.9 and 3.8 eV. Films of these QDs, when coated on crystalline silicon solar cells, show an increase in the efficiency of the solar cell by 12 %.

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