CdZnO Coated Thin Films: Application for Energy Conversion Devices

Автор(ы) R.A. Zargar1, A.H. Shah1, H.A. Reshi2, M. Arora3, F.A. Mir1
Принадлежность

1Department of Physics, Baba Ghulam Shah Badshah University, Rajouri (J & K)-185234, India

2Department of Physics, Government Degree College, Kulgam (J & K)-192231, India

3CSIR-National Physical Laboratory, Dr. K.S. Krishnan Marg, New Delhi-110012, India

Е-mail hilal.phy@gmail.com
Выпуск Том 11, Год 2019, Номер 1
Даты Получено 28 июня 2018; в отредактированной форме 06 февраля 2019; опубликовано online 25 февраля 2019
Ссылка R.A. Zargar, A.H. Shah, H.A. Reshi, et al., J. Nano- Electron. Phys. 11 No 1, 01027 (2019)
DOI https://doi.org/10.21272/jnep.11(1).01027
PACS Number(s) 81.20.ka, 81.70.Pg, 61.72.Uj
Ключевые слова TCO (2) , XRD (53) , UV-visible, Conductivity (42) , Spray pyrolysis (9) .
Аннотация

Wide band gap semiconductors have appeared as promising materials suitable for high temperature high frequency high power operations in electronics as well as optoelectronic devices because of their exceptional material characteristics. More specially CdO and ZnO films possess an outstanding ability to materialize short wavelength light emitting devices due to their large band gap energy. CdO and ZnO films are widely used for optoelectronic applications in the short wave length visible-light region especially for laser diodes (LDs) and light emitting diodes (LEDs). In this paper we report structural, optical and electrical properties of wide band gap CdZnO thin film prepared by spray-pyrolysis on glass substrate. Characterization of the samples was carried out with UV-spectroscopy, Х-ray diffraction (XRD), scanning electron microscope (SEM), Raman spectroscopy and four-probe measurements. The XRD pattern exhibited a mixture of cadmium oxide cubic and hexagonal ZnO phases. Surface morphology of sample was identified from SEM micrograph as porous surface. Raman spectra exhibit the strong E2 (High) phonon peak in addition to other multiphonon peaks. Optical absorption spectroscopy and DC conductivity measurements give the optical band gap of 2.87 eV and semiconductor nature with activation energy of 0.33 eV.

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