Magnetic Quantum Effects in Electronic Semiconductors at Microwave-radiation Absorption

Автор(ы) G. Gulyamov1,2, U.I. Erkaboev1, A.G. Gulyamov3

1Namangan Engineering-Technology Institute, 160115 Namangan, Uzbekistan

2Namangan Engineering - Construction Institute, 160103 Namangan, Uzbekistan

3Physico-technical Institute, NGO “Physics-Sun”, Academy of Sciences of Uzbekistan, 100084 Tashkent, Uzbekistan

Выпуск Том 11, Год 2019, Номер 1
Даты Получено 14 ноября 2018; в отредактированной форме 08 февраля 2019; опубликовано online 25 февраля 2019
Ссылка G. Gulyamov, U.I. Erkaboev, A.G. Gulyamov, J. Nano- Electron. Phys. 11 № 1, 01020 (2019)
PACS Number(s) 71.20. – b, 71.28. + d
Ключевые слова G. Gulyamov, U.I. Erkaboev, A.G. Gulyamov, J. Nano- Electron. Phys. 11 No 1, 01020 (2019).

Simulation of the temperature dependence on the microwave magnetoabsorption oscillations in electronic semiconductors is conducted using the Gaussian function and derivative of the Fermi-Dirac function by energy. Gaussian distribution function and derivative of the Fermi-Dirac function by energy are compared at different temperatures. It is shown that the distribution of the Gauss function is much more efficient and more rapidly tends to an ideal Dirac δ-function than the derivative of the Fermi-Dirac function by energy. The temperature dependence of the spectral density of states in semiconductors is calculated at quantizing magnetic fields. An analytical expression is obtained for the density of states in a quantizing magnetic field for narrow-gap semiconductors. Graphs of the temperature dependence of the density of states for InAs are constructed in a quantizing magnetic field. Oscillations of the absorption of microwave radiation in semiconductors are considered at different temperatures. A new mathematical model has been created for microwave absorption oscillations in narrow-band semiconductors. Using this model, the dependence of quantum oscillation phenomena on microwave absorption and temperature is calculated in electron gases. Graphs of oscillations of the derivative of the absorbed power by the magnetic field strength are obtained for InAs. A three-dimensional image of the absorption of microwave radiation for semiconductors has been constructed with the Kane dispersion law. The microwave magnetoabsorption oscillation was calculated in narrow-gap electronic semiconductors at different temperatures using the Gauss function. Formula for the dependence of the microwave magnetoabsorption oscillations on the electric field strength of an electromagnetic wave and temperature is obtained with the parabolic and Kane dispersion law. The calculation results are compared with experimental data. The proposed model explains the experimental results in HgSe at different temperatures.

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