A 2-D Analytical Threshold Voltage Model for Symmetric Double Gate MOSFET's Using Green’s Function

Автор(ы) Anoop Garg, S.N. Sinha, R.P. Agarwal
Принадлежность
Indian Institute of Technology Roorkee, Roorkee, 247667, Roorkee, India
Е-mail ashugarg.iit@gmail.com
Выпуск Том 3, Год 2011, Номер 1, Part 5
Даты Received 04 February 2011, published online 08 December 2011
Ссылка Anoop Garg, S.N. Sinha, R.P. Agarwal, J. Nano- Electron. Phys. 3 No1, 894 (2011)
DOI
PACS Number(s) 85.30. – z, 85.30.De
Ключевые слова Green’s function, Minimum surface potential, Threshold voltage (15) , Symmetric DG-MOSFET, Two dimensional (2D) Poisson equations and undoped or lightly doped.
Аннотация
We propose a new two dimensional (2D) analytical solution of Threshold Voltage for undoped (or lightly doped) Double Gate MOSFETs. We have used Green’s function technique to solve the 2D Poisson equation, and derived the threshold voltage model using minimum surface potential concept. This model is assumed uniform doping profile in Si region. The proposed model compared with existing literature and experimental data and we obtain excellent agreements with previous techniques.

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