Estimation of the Relative Energy of Grain Boundaries in Silicon Films by the Grain Boundary Grooves Method

Автор(ы) T.V. Rodionova1, P.M. Lytvyn2
Принадлежность

1Taras Shevchenko National University of Kyiv, 64, Volodymyrska Str., 01601 Kyiv, Ukraine

2Institute of Semiconductor Physics of NASU, 41, Nauky Prosp., 03028 Kyiv, Ukraine

Е-mail rodtv@univ.kiev.ua
Выпуск Том 10, Год 2018, Номер 6
Даты Получено 16.08.2018; в отредактированной форме 29.11.2018; опубликовано online 18.12.2018
Ссылка T.V. Rodionova, P.M. Lytvyn, J. Nano- Electron. Phys. 10 No 6, 06040 (2018)
DOI https://doi.org/10.21272/jnep.10(6).06040
PACS Number(s) 68.35._p, 68.37.Ps
Ключевые слова Silicon films, Dihedral angles, Relative grain-boundary energy, Atomic force microscopy (9) .
Аннотация

The relative grain-boundary energy of undoped and phosphorus-doped silicon films with equiaxed, dendritic and fibrous structure, prepared by low-pressure chemical vapor deposition, was determined by the method of grain boundary grooves being formed at the intersection of the grain boundary plane with the free surface. The measurements of grain boundary groove dihedral angles were performed by atomic force microscopy. It was shown that undoped films with a fibrous structure possess the lowest relative grain-boundary energy; the largest relative energy was observed in fibrous structure. High grain boundary energy in fibrous type structure can be due to the presence in these films of a large number of high-order twin boundaries (Σ3, Σ9, Σ27, and so on) having high energy. Doping with phosphorus leads to increased grain boundary energy in films with dendritic structure, which may be due to segregation of phosphorus on the boundaries of grains.

Список литературы

English version of article