Influence of UV Light of Extraterrestrial Solar Irradiance on Structure and Properties of ZnO Films Prepared Through Pulsed Electrochemical Deposition and via SILAR Method

Автор(ы) N.P. Klochko1, K.S. Klepikova1, S.I. Petrushenko2, V.R. Kopach1, G.S. Khrypunov1 , D.O. Zhadan1, S.V. Dukarov2, V.M. Lyubov1, M.V. Kirichenko1 , S.V. Surovitskiy1, A.L. Khrypunova1

1National Technical University “Kharkiv Polytechnic Institute”, 2, Kyrpychov Str., 61002 Kharkiv, Ukraine

2V.N. Karazin Kharkiv National University, 4, Svobody Square, 61022 Kharkiv, Ukraine

Выпуск Том 10, Год 2018, Номер 6
Даты Получено 29.08.2018; в отредактированной форме 29.11.2018; опубликовано online 18.12.2018
Ссылка N.P. Klochko, K.S. Klepikova, S.I. Petrushenko, et al., J. Nano- Electron. Phys. 10 No 6, 06038 (2018)
PACS Number(s) 61.46.Km, 68.37.Ps
Ключевые слова Extraterrestrial UV light, Zinc oxide (10) , ZnO:In, Pulse electrodeposition, SILAR (4) , Point defect.

The investigations of effect of long-wave (UVA) and short-wave (UVC) ultraviolet light of extraterrestrial solar irradiance on the nanostructured zinc oxide arrays, which were grown by pulsed electrodeposition, as well as on the ZnO and ZnO:In films produced by Successive Ionic Layer Adsorption and Reaction technique (SILAR) confirmed their suitability as UVA-active photosensitive materials. The crystal structure, surface morphology, chemical composition and optical properties found no obvious significant destructive changes after UVC irradiation. However, we detected some irreversible changes in the nature of point defects under the influence of UVC, which affect the ZnO and ZnO:In resistivity, activation energy, photosensitivity and thermoelectrical properties.

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