Effect of Annealing Temperature on Structural, Optical and Electrical Properties of ZnO Thin Films Prepared by Sol-Gel Method

Автор(ы) S. Benramache1, Y. Aoun1,2, S. Lakel3, H. Mourghade3, R. Gacem3, B. Benhaoua4
Принадлежность

1Laboratoire de Physique Photonique et Nanomatériaux Multifonctionnels, University of Biskra, 07000 Algeria

2Mechanics Department, University of El-Oued, El-Oued, 39000 Algeria

3Material Sciences Department, Faculty of Science, University of Biskra, 07000 Algeria

4Unite de Développement des Energies Renouvelables dans les Zones Arides, El-Oued, Algérie

Е-mail saidbenramache07@gmail.com
Выпуск Том 10, Год 2018, Номер 6
Даты Получено 22.09.2018; в отредактированной форме 07.12.2018; опубликовано online 18.12.2018
Ссылка S. Benramache, Y. Aoun, S. Lakel, et al., J. Nano- Electron. Phys. 10 No 6, 06032 (2018)
DOI https://doi.org/10.21272/jnep.10(6).06032
PACS Number(s) 77.84.Bw, 78.20. – e, 81.20.Fw
Ключевые слова ZnO (46) , Thin films (58) , Transparent conducting films, Annealing temperature (5) , Spin-coating method.
Аннотация

A transparent semiconductor ZnO thin film was prepared on glass substrates using spin coating sol-gel method. The coated ZnO films were annealed in air for 2 hours at different temperatures of 0, 450, 500, 550 and 600 °C. The films were obtained at a concentration of sol-gel solution is 0.5 M. In present paper, the structural, optical and electrical properties of the ZnO thin films were studied as a function of the annealing temperature. The DRX analyses indicated that the coated ZnO films exhibit an hexagonal structure wurtzite and (002) oriented with the maximum value of crystallite size G ( 69.32 nm is measured of ZnO film annealed at 600 °C. The crystallinity of the thin films improved at high annealing temperature which was depends too few defects. Spectrophotometer (UV-vis) of a ZnO films deposited at different annealing temperatures shows an average transmittance of about 88 %. The band gap energy decreased after annealing temperature from Eg ( 3.359 to 3.117 eV for without annealing and annealed films at 450 °C, respectively, than increased at 600 °C to reaching the maximum value 3.251 eV. The minimum value of the sheet resistance Rsh of the films is 107635 Ω was obtained for ZnO thin film annealed at 600 °C. The best estimated structure, optical and electrical results are achieved in annealed ZnO film at 600 °C.

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