Electronics Properties of Monoclinic HfO2

Автор(ы) Abdelkrim Mostefai1, Smail Berrah2, Hamza Abid1
Принадлежность

1Applied Materials Laboratory, University of Sidi Bel Abbes, 22000- Sidi Bel Abbes, Algeria

2LMER Laboratory, University of A/ Mira of Bejaia, Algeria

Е-mail mostakrimo@yahoo.fr
Выпуск Том 10, Год 2018, Номер 6
Даты Получено 04.12.2017; в отредактированной форме 04.12.2018; опубликовано online 18.12.2018
Ссылка Abdelkrim Mostefai, Smail Berrah, Hamza Abid, J. Nano- Electron. Phys. 10 No 6, 06026 (2018)
DOI https://doi.org/10.21272/jnep.10(6).06026
PACS Number(s) 71.15.Ap, 71.15.Mb
Ключевые слова Abdelkrim Mostefai, Smail Berrah, Hamza Abid, J. Nano- Electron. Phys. 10 No 6, 06026 (2018).
Аннотация

Density functional theory (DFT) is a very successful technique to calculating the properties of many-electron systems from first principles. The bands structures, charge density and density of state (DOS) of monoclinic HfO2 are calculated using Pseudo potential (PP) and Atomic Orbitals (AO) method, within the density functional theory DFT, generalized gradient approximation GGA and local density approximation LDA. Hafnium oxide (HfO2) is a high-k dielectric (dielectric constant k ~ 25 at 300 K, band gap Eg ≈ 6 eV); thermally stable up to 700 (C. HfO2 is used in semiconductor manufacturing processes where they are usually used to replace a silicon dioxide gate dielectric.

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