Structural and Electrical Properties of AgSbSe2 Thin Films with the Inclusion of Lead Chalcogenides

Автор(ы) Y.V. Tur1, I.S. Virt1, 2
Принадлежность

1Drohobych State Pedagogical University, 3, Stryiska Str., 82100 Drohobych, Ukraine

2University of Rzeszow, 1, S. Pigon Str., 35310 Rzeszow, Poland

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Выпуск Том 10, Год 2018, Номер 5
Даты Получено 22.07.2018, в отредактированной форме – 22.10.2018, опубликовано online 29.10.2018
Ссылка Y.V. Tur, I.S. Virt, J. Nano- Electron. Phys. 10 No 5, 05034 (2018)
DOI https://doi.org/10.21272/jnep.10(5).05034
PACS Number(s) 73.50.Lw, 84.60.Pb
Ключевые слова Chalcogenides metals, Thin films (57) , Structure (98) , Electrical properties (17) .
Аннотация

The results of experimental investigation of structural and  electrical properties of AgSbSe2 films are presented in this work. The films of AgSbSe2 of different thickness were obtained on Al2O3, glass and KCl substrates in vacuum of 1 × 10 – 4 Pa by the pulsed laser deposition method. The parameters of the crystal structure of thin films are determined by X-ray diffractometry and low-energy electrons diffraction of (LEED). Depending on the growth temperature of the film there is a transition from crystalline  to fine polycrystalline (amorphous) structure. The temperature behaviour of the electrical conductivity and the acceptor level is determined.

Список литературы

English version of article