Investigation of Absorber Layer Thickness Effect on CIGS Solar Cell in Different Cases of Buffer Layers

Автор(ы) Benslimane Hassane, Dennai Benmoussa

Physics and Semiconductors Devices Laboratory, Materials Science Departement, Tahri Mohammed University, BP. 417, Bechar, Algeria

Выпуск Том 10, Год 2018, Номер 5
Даты Получено 22.07.2018; в отредактированной форме 24.10.2018; опубликовано online 29.10.2018
Ссылка Benslimane Hassane, Dennai Benmoussa, J. Nano- Electron. Phys. 10 No 5, 05044 (2018)
PACS Number(s) 84.60.Jt
Ключевые слова Solar cell (48) , CIGS (7) , Buffer layer (2) , Efficiency (23) , AMPS-1D (10) .

This study investigates the interplay between the absorber layer of Cu(In,Ga)Se2 solar cells and the buffer layer of these devices. Cu(In,Ga)Se2 devices with absorbers of different thicknesses and different buffer layers are simulated. We found that the reduction in thickness of the CIGS cell leads to decrease short-circuit current, it is the main cause of degradation photovoltaic conversion efficiency. It has been found that substitution of the CdS buffer layer by other materials such as ZnS can limit this performance degradation.

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