A New Electro-Thermal Modeling of Low Voltage Power MOSFET with Junction Tempera-ture Dependent Foster (RC) Thermal Network

Автор(ы) Smail Toufik, Dibi Zohir

Advanced Electronic Laboratory, Electronic Department, University BATNA 2, Algeria

Е-mail Smail.toufik77@gmail.com, Zohirdidi@yahoo.fr
Выпуск Том 10, Год 2018, Номер 4
Даты Получено 15.04.2018; опубликовано online 25.08.2018
Ссылка Smail Toufik, Dibi Zohir, J. Nano- Electron. Phys. 10 No 4, 04017 (2018)
DOI http://dx.doi.org/10.21272/jnep.10(4).04017
PACS Number(s) 85.30.Tv
Ключевые слова Electro-thermal (ET) model, Junction temperature (Tj), Reliability (8) , MOSFET (27) , Genetic Algorithm (GA), PSpice (4) .

Thermal loading of MOSFET (Metal-Oxide-Semiconductor- Field-Effect-Transistor) model is a very important factor for the reliability of power electronics systems. Thus, the junction temperature must be accurately estimated. This paper presents a new electro-thermal (ET) model for low voltage Power MOSFET rated at (30 V/13 A) by PSpice simulator to estimate junction temperature (Tj) and power loss. The (ET) model is composed of electrical network model and (RC) thermal network model. The parameters of the (RC) thermal network model are extracted from datasheet using genetic algorithms (GA) method for computation of the transient thermal impedance (Zth(j – c)). The propose model reflects superior performance in terms of flexibility and accuracy. The results obtained indicate a good matching between proposed model and manufacturer’s data.

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