An Analytical Modeling of Drain Current for Single Material Surrounded Gate Nanoscale SOI MOSFET

Автор(ы) Arjimand Ashraf1, Prashant Mani

1M. Tech Scholar, ECE Department, SRM University, Delhi NCR, India

2AssociateProfessor, ECE Department, SRM University, Delhi NCR, India

Выпуск Том 10, Год 2018, Номер 4
Даты Получено 21.03.2018; опубликовано online 25.08.2018
Ссылка Arjimand Ashraf, Prashant Mani, J. Nano- Electron. Phys. 10 No 4, 04012 (2018)
PACS Number(s) 61.48.De
Ключевые слова SMG SGT SOI MOSFET, Linear region, Sub-threshold, Saturation (6) , DIBL (5) .

In this paper, we have presented modeling of drain current for single material surrounded gate SOI MOSFET (SMG SGT SOI MOSFET) whose channel length is 40nm. We have studied the behavior of device by varying various device parameters in Linear, Saturation, and Sub-threshold regions. We have also presented a drain current model incorporating DIBL. The comparison between previously presented model with channel length = 50 nm and our scaled model is also presented in various regions of  device operation.

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