A Graphical Method to Study Electrostatic Potentials of 25 nm Channel Length DG SOI MOSFETs

Автор(ы) M. Djerioui, M. Hebali, D. Chalabi, A. Saidane
Принадлежность

Labo.CaSiCCE ENP d’Oran, B.P 1523 Oran El M’Naouar 31000, Algeria

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Выпуск Том 10, Год 2018, Номер 4
Даты Получено 10.05.2018; в отредактированной форме 10.08.2018; опубликовано online 25.08.2018
Ссылка M. Djerioui, M. Hebali, D. Chalabi, A. Saidane, J. Nano- Electron. Phys. 10 № 4, 04027 (2018)
DOI https://doi.org/10.21272/jnep.10(4).04027
PACS Number(s) 85.30.De
Ключевые слова Symmetrical DG SOI MOSFET, Poisson’s equation (4) , Electrostatic potential, Numerical method.
Аннотация

To determine electrostatic potentials in silicon channel of undoped DG SOI MOSFET devices, a graphical approach is proposed. The method keeps close to experimental reality by taking into account flat band potential at reduced channel lengths up to 25 nm. This graphical method solves a transcendental equation of Poisson’s equation to obtain electrostatic potentials at center and surface of device as a function gate and drain bias voltages.

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