Effect of Intrinsic Layer Thickness on PIN Structure for Tandem Solar Cell Based on Indium Gallium Nitride Using AMPS -1D

Автор(ы) Omar Souilah1, A. Benzair2, B. Dennai3, H. Khachab3
Принадлежность

1Laboratory of Study of Materials and Optics Instrumentations, University of Sidi Bel-Abbes, 22000 Algeria

2Laboratory of Modeling and simulation in multi-scale, University of Sidi Bel-Abbes, 22000Algeria

3Laboratory in semiconductor device University of Bechar, 08000 Algeria

Е-mail omar.souilah2@gmail.com
Выпуск Том 10, Год 2018, Номер 4
Даты Получено 27.02.2018; опубликовано online 25.08.2018
Ссылка Omar Souilah, A. Benzair, et al., J. Nano- Electron. Phys. 10 № 4, 04013 (2018)
DOI https://doi.org/10.21272/jnep.10(4).04013
PACS Number(s) 84.60.Jt, 88.40.jm
Ключевые слова Solar cell (43) , Tandem (2) , Simulation (30) , PIN structure, AMPS-1D (8) , Efficiency (20) , InGaN (3) .
Аннотация

In this work we have studied The effect of thickness of the intrinsic layer in the PIN structure of InGaN tandem solar cells such as photo generation rate, efficiency and recombination rate through the cells. Improvement around of 13 % of PIN tandem solar cell over PN tandem solar cell is observed for low doping concentration (NA  1016 cm – 3; ND  1018 cm – 3) and surface recombination (103cm/s). The photo-generated short-circuit current density (Jsc) and the open-circuit voltage (Voc) of structures under AM 1,5G (one sun) illumination, are simulated for different thickness of intrinsic layer varying from 50 nm to 350 nm.

Список литературы