Electronic Conduction in Annealed Sulfur-Doped a-Si:H Films

Автор(ы) Himanshu Gupta1, Fateh Singh Gill2, S.K. Sharma3, R. Kumar4, R.M. Mehra5

1Department of Physics, Gurukula Kangri University, Haridwar-249401, India

2Graphic Era University, Clement Town, Dehradun, India

3Semiconductor Device Laboratory, Department of Semiconductor Science, Dongguk University-Seoul, Jung-gu, Seoul 100-715, Korea

4Garg Degree College, Luksar Road Haridwar, Uttrakhand, India

5School of Engineering & Technology, Sharda University, Greater Noida -201306, India

Выпуск Том 10, Год 2018, Номер 3
Даты Получено 26.03.2018; в отредактированной форме 06.06.2018; опубликовано online 25.06.2018
Ссылка Himanshu Gupta, Fateh Singh Gill, et al., J. Nano- Electron. Phys. 10 No 3, 03014 (2018)
DOI https://doi.org/10.21272/jnep.10(3).03014
PACS Number(s) 71.55.Ak , 71.55.Jv, 73.61.Jc
Ключевые слова a-Si:H, Dark and Photoconductivity (2) , Annealing effect, S doped a-Si:H.

In present work, the effect of annealing on dark and photo conductivity as well as the various causes of conduction mechanics in S doped amorphous hydrogenated silicon films (a-Si:H) is discussed. The variation of the dark conductivity as a function of temperature has been carried out on unannealed and annealed (annealed at an optimized temperature of 300 °C) thin film samples and the activation energy of dark conductivity of respective samples was also calculated at different temperatures. The Study concludes that at high temperatures, an activated type mechanism is responsible for conduction in the a-Si:H films.

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