Structure Features of Bismuth Films Doped with Tellurium

Автор(ы) D.Yu. Matveev1, D.V. Starov1, E.V. Demidov2
Принадлежность

1Astrakhan State University, 20a, Tatischev Str., 414056 Astrakhan, Russia

2Herzen State Pedagogical University, 6, Kazanskaya (Plekhanova) Str., 191186 St. Petersburg, Russia

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Е-mail anila200586@mail.ru
Выпуск Том 10, Год 2018, Номер 2
Даты Получено 31.10.2017; опубликовано online – 29.04.2018
Ссылка D.Yu. Matveev, D.V. Starov, E.V. Demidov, J. Nano- Electron. Phys. 10 No 2, 02047 (2018)
DOI https://doi.org/10.21272/jnep.10(2).02047
PACS Number(s) 73.90 + f, 81.15.Cd
Ключевые слова Thin films (53) , Impurity (4) , Bismuth (7) , Tellurium (3) , Growth figure, Crystallite size (2) .
Аннотация

The influence of doping degree on the structural characteristics of bismuth films doped with tellurium in the concentration range 0.005-0.150 at. % Te and the thickness range 0.3-0.7 (m is studied at present article. Authors have established that an increase of the doping degree with tellurium in bismuth films leads to a significant decreasing of the growth figures. The weak influence of annealing on the crystallite size of bismuth films doped with tellurium indicates their high temporal stability of the structure.

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