Preparation and Properties of Zinc Doped Cadmium Selenide Compounds by E-Beam Evaporation

Автор(ы) N.J. Suthan Kissinger1, K. Perumal2, J. Suthagar3

1 Department of Physics, Jubail University College, Jubail Industrial City 31961, Saudi Arabia

2 Department of Physics, SRMV College of Arts & Science, Coimbatore-641020, India

3 Department of Physics, Karunya University, Coimbatore-641114, India

Выпуск Том 3, Год 2011, Номер 3
Даты Received 12 June 2011, in final form 07 July 2011, published online 05 November 2011
Ссылка N.J. Suthan Kissinger, K. Perumal, J. Suthagar, J. Nano- Electron. Phys. 3 No3, 5 (2011)
PACS Number(s) 73.61.Ga, 61.05.cp, 68.55.J, 88.37.Hk
Ключевые слова Cadmium Selenide, Zinc Selenide, Electron Beam (3) , Evaporation (17) , Optical Properties (20) .
Cd1 – xZnxSe films with different zinc content were deposited by electron beam evaporation technique onto glass substrates for the application of solid-state photovoltaic devices. The structural, surface morphological and optical properties of Cd1 – xZnxSe films have been studied in the present work. The host material,Cd1 – xZnxSe, have been prepared by the physical vapor deposition method of electron beam evaporation technique (PVD: EBE) under a pressure of 1 × 10 – 5 mbar. The X-ray diffractogram indicates that these alloy films are polycrystalline in nature, hexagonal structure with strong preferential orientation of the crystallites along (002) direction. Linear variation of lattice constant with composition (x) is observed. The optical properties shows that the band gap (Eg) values varies from 2.08 to 2.64 eV as zinc content varies from 0.2 to 0.8. The surface morphological studies show the very small, fine and hardly distinguishable grains smeared all over the surface. It is observed that the grain size is decreasing with increasing zinc content.

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