Transport Phenomena for Development Inductive Elements Based on Silicon Wires

Автор(ы) A.A. Druzhinin1,2 , I.P. Ostrovskii1 , Yu.M. Khoverko1,2 , R.M. Koretskyy1, M.Yu. Chernetskiy1
Принадлежность

1Lviv Polytechnic National University, 12, S. Bandera Str., 79013 Lviv, Ukraine

2Institute of Low Temperature and Structure Research, Wroclaw, Poland

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Е-mail druzh@polynet.lviv.ua
Выпуск Том 10, Год 2018, Номер 2
Даты Получено 17.01.2018; в отредактированной форме 27.04.2018; опубликовано online 29.04.2018
Ссылка A.A. Druzhinin, I.P. Ostrovskii, et al., J. Nano- Electron. Phys. 10 No 2, 02038 (2018)
DOI https://doi.org/10.21272/jnep.10(2).02038
PACS Number(s) 73.43.Qt, 71.30. + h, 73.25. + i
Ключевые слова Silicon wires, Impedance spectroscopy (4) , Metal-insulator transition (3) , Inductive element.
Аннотация

Conductance and magnetoresistance of Si < B > whiskers with diameters 5-40 μm doped with boron impurity were investigated in temperature range 4.2 ÷ 300 К, frequency range 1÷105 Hz and magnetic fields with intensity up to 14 Т by method of impedance spectroscopy. Hopping conductance on impurity states was shown to be realized in the crystals in low temperature region. The studies allow us to obtain parameters of hopping conduction. On the basis of experimental results a miniature inductive element was created using silicon wire.

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