Equivalent Circuit of Betavoltaic Structure on Silicon pn Diode

Автор(ы) Yuri S. Nagornov
Принадлежность

Department of Physics, University of Tokyo, Hongo, Bunkyo-ku, Tokyo 113-0033, Japan

Е-mail Nagornov.Yuri@gmail.com
Выпуск Том 10, Год 2018, Номер 1
Даты Received 18 July 2017; revised manuscript received 27 October 2017; published online 24 February 2018
Ссылка Yuri S. Nagornov, J. Nano- Electron. Phys. 10 No 1, 01027 (2018)
DOI 10.21272/jnep.10(1).01027
PACS Number(s) 88.05.Bc, 72.20.Jv
Ключевые слова Charge carriers, Betavoltaic structure, Silicon diode, Equivalent circuit, Betavoltaics effect.
Аннотация

The equivalent circuit of betavoltaics silicon pn diode is proposed. The circuit includes the current source from betavoltaics effect, ideal pn diode, shunt and series resistances, and also barrier capacity with charge on it. The model allows to explain that increasing of charge on the surface silicon pn diode must decrease the effectiveness of energy conversion. As example, we showed that the open circuit voltage is decreased during irradiation time from beta source Ni-63 and it rapidly becomes higher after discharging.

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