Amplitude-time Characteristics of Switching in Thin Films of Cadmium Telluride

Автор(ы) М.G. Khrypunov, R.V. Zaitsev , D.A. Kudii, A.L. Khrypunova

National Technical University «Kharkiv Polytechnic Institute», 2, Kyrpychov Str., 61002 Kharkiv, Ukraine

Выпуск Том 10, Год 2018, Номер 1
Даты Received 21 January 2018; published online 24 February 2018
Ссылка М.G. Khrypunov, R.V. Zaitsev, et al. J. Nano- Electron. Phys. 10 No 1, 01016 (2018)
DOI 10.21272/jnep.10(1).01016
PACS Number(s) 68.55.Jk, 68.47.Fg
Ключевые слова Cadmium Telluride films, Amplitude-time characteristics, X-ray diffractometry (2) , Scanning electron microscopy (15) , Melted high-conductivity channel.

The amplitude-time characteristics of switching in thin films of cadmium telluride were investigated when single impulses of 1 μs duration are applied. It has been experimentally established that with an increase in the thickness of the cadmium telluride layer from 3 mm to 8 mm, an increase in the operating threshold from 70 V to 105 V is observed. The maximum residual sample voltage varies from 12 V to 40 V, the minimum – from 5 V to 20 V. The switching time of the samples was no more than 2 nanoseconds; the interelectrode capacity of the samples was no more than 2 pF. All the test samples were operated without failure 20 times. The structural studies of cadmium telluride films by the method of X-ray diffractometry and scanning electron microscopy have made it possible to propose a mechanism for realizing the monostable switching of the columnar structure of cadmium telluride films oriented in the form of melted high-conductivity channels in grains oriented in the [111] direction.

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