Amplitude-time Characteristics of Switching in Thin Films of Cadmium Telluride

Автор(ы) М.G. Khrypunov, R.V. Zaitsev, D.A. Kudii, A.L. Khrypunova

National Technical University «Kharkiv Polytechnic Institute», 2, Kyrpychov Str., 61002 Kharkiv, Ukraine

Выпуск Том 10, Год 2018, Номер 1
Даты Received 21 January 2018; published online 24 February 2018
Ссылка М.G. Khrypunov, R.V. Zaitsev, et al. J. Nano- Electron. Phys. 10 No 1, 01016 (2018)
DOI 10.21272/jnep.10(1).01016
PACS Number(s) 68.55.Jk, 68.47.Fg
Ключевые слова Cadmium Telluride films, Amplitude-time characteristics, X-ray diffractometry (2) , Scanning electron microscopy (15) , Melted high-conductivity channel.

The amplitude-time characteristics of switching in thin films of cadmium telluride were investigated when single impulses of 1 μs duration are applied. It has been experimentally established that with an increase in the thickness of the cadmium telluride layer from 3 mm to 8 mm, an increase in the operating threshold from 70 V to 105 V is observed. The maximum residual sample voltage varies from 12 V to 40 V, the minimum – from 5 V to 20 V. The switching time of the samples was no more than 2 nanoseconds; the interelectrode capacity of the samples was no more than 2 pF. All the test samples were operated without failure 20 times. The structural studies of cadmium telluride films by the method of X-ray diffractometry and scanning electron microscopy have made it possible to propose a mechanism for realizing the monostable switching of the columnar structure of cadmium telluride films oriented in the form of melted high-conductivity channels in grains oriented in the [111] direction.

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