Design Optimization of Deflection Caused After Release of Multilayer Structural Membrane of Symmetric Toggle Switch

Автор(ы) K. Maninder1, Akshdeep Sharma1, Deepak Bansal1, Dinesh Kumar2, S. Singh3, K.J. Rangra1

1 Central Electronics Engineering Research Institute (CEERI), Council of Scientific and Industrial Research, Pilani, 333031, Rajasthan, India

2 Department of Electronic Sciences, Kurukshetra University, 136119, Kurukshetra, Haryana, India

3 ATDD, Space Application Centre, ISRO, Jodhpur Tekra, Ambawadi Vistar, 380015, Ahmedabad, Gujarat, India

Выпуск Том 3, Год 2011, Номер 1, Part 4
Даты Received 04 February 2011, published online 17 October 2011
Ссылка K. Maninder, Akshdeep Sharma, Deepak Bansal, Dinesh Kumar, S. Singh, K.J. Rangra, J. Nano- Electron. Phys. 3 No1, 787 (2011)
PACS Number(s) 85.85.+j
Ключевые слова Multilayer (11) , RF MEMS switch, Deflection, Fabrication (3) , Isolation, Insertion loss (2) .
This paper presents the optimization in deflection caused by the inbuilt stress generated in mechanical or movable membrane of Symmetric Toggle RF MEMS Switch (STS). The movable membrane of STS was initially fabricated with two different materials, i.e. Chrome and Gold. The simulated deflection at 70 °C was 11.9 µm, and experimental deflection was 11-12 µm. We present a study of inbuilt deflection reduction in multimetal movable layers without change in actuation voltage of the switch. The design study was initially carried out on cantilevers and then on structural membrane of STS. STS with proposed multilayer of Cr-Au-Au-Ti-Au has a simulated deflection of 0.56 µm at 70 °C.

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