Strategic Review of Arsenide, Phosphide and Nitride MOSFETs

Автор(ы) Gourab Dutta, Palash Das , Partha Mukherjee, Dhrubes Biswas
Принадлежность Indian Institute of Technology-Kharagpur Kharagpur, West Bengal 721 302
Е-mail gdutta.iitkgp@gmail.com
Выпуск Том 3, Год 2011, Номер 1, Part 4
Даты Received 04 February 2011, , published online 17 October 2011
Ссылка Gourab Dutta, Palash Das, Partha Mukherjee, Dhrubes Biswas, J. Nano- Electron. Phys. 3 No1, 728 (2011)
DOI
PACS Number(s) 85.30.TV
Ключевые слова Review, Arsenide (4) , Phosphide (2) , Nitride (15) , MOSFET (27) , Comparison.
Аннотация
Metal oxide semiconductor field effect transistor used as an amplifier and switch uses Si primarily as a channel material for its very stable oxide SiO2. In-spite of many advantages there are some restrictions for Si MOS, so the world is approaching towards compound semiconductor for higher frequency and current. The development of compound semiconductor metal oxide semiconductor is also facing critical problems due to the lack of availability of proper gate oxide material. Research is being conducted on arsenide and phosphide metal oxide semiconductor field effect transistor. Nitride channel MOS are in focus due to their high band gap, high current and high temperature uses.

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