Metal-Semiconductor Field-Effect Transistors Fabricated Using DVT Grown n-MoSe2 Crystals With Cu-Schottky Gates

Автор(ы) C.K. Sumesh1, K.D. Patel2 , V.M. Pathak2 , R.Srivastava2
Принадлежность

1 Department of Physics, Charotar Institute of Technology, Charusat, Changa, 388 420, Anand, India

2 Department of Physics, Sardar patel University, V.V. Nagar, 388 120, Anand, India

Е-mail cksumesh.cv@ecchanga.ac.in
Выпуск Том 3, Год 2011, Номер 1, Part 4
Даты Received 04 February 2011, published online 17 October 2011
Ссылка C.K. Sumesh, K.D. Patel, V.M. Pathak, R.Srivastava, J. Nano- Electron. Phys. 3 No1, 709 (2011)
DOI
PACS Number(s) 85.30.Tv, 85.30.Kk, 73.40.Ei
Ключевые слова MoSe~2, MESFET (2) , Ohmic contact (5) , Schottky contact (5) , I-V analysis.
Аннотация
Metal-semiconductor field-effect transistors (MESFETs) based on DVT grown MoSe2 crystals and Cu Schottky gate have been fabricated and studied. When Schottky gate voltage (Vgs) changes from 0 to 10 V, the source-drain current (Ids) increases exponentially with Vgs and the conductance shows a drastic increase with positive Vgs. The fabricated n-MoSe2 MESFET have a saturated current level of about 100 mA and maximum transconductance of about 53 mA/V. Their results suggest a way of fabricating MESFETs from layered metal dichalcogenide semiconducting materials.

Список литературы