PbS-ZnO Solar Cell: A Numerical Simulation

Автор(ы) Jaymin Ray1, Tapas K. Chaudhuri2, Chetan Panchal3, Kinjal Patel1, Keyur Patel4, Gopal Bhatt4, Priya Suryavanshi3
Принадлежность

1 Department of Physics, Uka Tarsadiya University, Bardoli, Dist. Surat, Guajrat 394120, India

2 Department of Physics, SVNIT, Surat, Gujarat 395007, India

3 Applied Physics Department, M.S. University of Baroda, Vadodara, Gujarat 390001, India

4 Science and Humanity Department, BITS Education Campus, Vadodara, Gujarat 390001, India

Е-mail jayminray@gmail.com
Выпуск Том 9, Год 2017, Номер 3
Даты Получено 28.04.2017, в отредактированной форме – 10.05.2017, опубликовано online – 30.06.2017
Ссылка Jaymin Ray, Tapas K. Chaudhuri, Chetan Panchal, et al., J. Nano- Electron. Phys. 9 No 3, 03041 (2017)
DOI 10.21272/jnep.9(3).03041
PACS Number(s) 78.20.Bh, 73.40.Lq, 84.60.Jt
Ключевые слова PbS Thin Film, Numerical Simulation (3) , Current-Voltage characteristic (12) , QE analysis.
Аннотация Nanoscale PbS, especially quantum dots (QDs) are of interest in applications, such as, solar cells and photodetectors because of tunability of band gap from 0.5 to 3 eV. Recently, ZnO/PbS solar cells with 8.55 % conversion efficiency have been reported with films made deposited from ligand exchanged PbS QDs. However, nanocrystalline PbS is easier to fabricate than QDs. This paper reports theoretical investigation into the use of nanocrystalline PbS in place of QDs as solar cell absorber. Solar cells with a structure of SLG/ITO/ZnO or CdS/PbS/Al was simulated using SCAPS software. We have used two n-type materials one is ZnO and second is CdS. The comparative simulated device performance was studied by current-voltage (I-V) characteristics and quantum efficiency (QE). The final results reveal a power conversion efficiency of 18.5 % for solar cells with p-PbS as absorber and n-ZnO as buffer and 16.8 % for n-CdS buffer layer.

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