Assessment of the H2 Followed by Air Sintering of Co-doped In2O3 Based Diluted Magnetic Semiconductors

Автор(ы) Rana Mukherji1, Vishal Mathur1 , Arvind Samariya2, Manishita Mukherji3
Принадлежность

1 The ICFAI University, Jaipur, India

2 S.S. Jain Subodh P.G. College, Jaipur, India

3 Amity University Rajasthan, Jaipur, India

Е-mail rana.mukherji@gmail.com
Выпуск Том 9, Год 2017, Номер 2
Даты Получено 15.01.2017, опубликовано online – 28.04.2017
Ссылка Rana Mukherji, Vishal Mathur, Arvind Samariya, Manishita Mukherji, J. Nano- Electron. Phys. 9 No 2, 02003 (2017)
DOI 10.21272/jnep.9(2).02003
PACS Number(s) 75.20. – g, 81.07.Bc,81.05.Hd
Ключевые слова Diluted magnetic semiconductors (2) , Transition metals (2) , In2O3.
Аннотация The study shows the influence of Co doping, sintering in hydrogen atmosphere and re-heating on magnetic properties of In2O3.The In0.97Co0.03O samples were prepared by solid state reaction method. XRD patterns shows that Co ions take position of at the In3+ sites. The investigations at room temperature (RT) concludes that the Co doped In2O3 sample had achieved overlapped paramagnetic (PM) properties conquering the diamagnetic (DM) properties of In2O3. Additionally, it was found that the ferromagnetism (FM) is noticeably induced via H2-annealing at 300 K. This study also depicts that the sample is finally reverted to the PM state after further long sintering.

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