Resistive Switching Properties of Highly Transparent SnO2:Fe

Автор(ы) S.J. Trivedi,  U.S. Joshi
Принадлежность

Department of Physics, School of Sciences, Gujarat University, Ahmedabad-380 009, India

Е-mail usjoshi@gmail.com
Выпуск Том 9, Год 2017, Номер 1
Даты Получено 09.12.2016, опубликовано online – 20.02.2017
Ссылка S.J. Trivedi,  U.S. Joshi, J. Nano- Electron. Phys. 9 No 1, 01025 (2017)
DOI 10.21272/jnep.9(1).01025
PACS Number(s) 73.61._r, 78.20._e
Ключевые слова Resistance switching, Tin oxide (8) , UV (14) , Vis spectroscopy (2) , RRAM (3) .
Аннотация Fe doped SnO2 transparent thin film nanostructures were grown by chemical solution deposition and its electric field induced resistive switching properties were investigated for non-volatile resistive random access memory (RRAM) applications. Simple, low temperature solution process growth of SnO2:Fe thin film nanostructures was employed. Grazing incidence X-ray diffraction (GIXRD) and atomic force microscopy (AFM), respectively, confirmed a phase pure cubic growth with mono-disperse nanocrystallites of ~ 20 nm. Sharp interface with substrate and top metal electrodes were achieved. Reproducible hysteresis in the I-V curves with symmetrical resistance switching ratio of more than 4  103 at a low operating voltage of ± 1.1 V has been demonstrated. Large values of memory retention of about 5 moths; confirmed the non-volatile behaviour of the device cell consisting of Ag/SnO2:Fe/Ag planar structure. A mechanism involving the space charge limited current combined with Schottky conduction at the metal/oxide interface is proposed. A possible mechanism of the formation and rupture of conducting filament is proposed based on the Joule heating effect with external electron injection at the Ag/SnO2 interface.

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