Memristor Effect in Ni/TiOx/p-Si/Ni and Ni/TiOx/p-Si/TiOx/Ni Heterojunctions

Автор(ы) V.A. Skryshevsky1, O.M. Kostiukevych2, V.V. Lendiel3, O.V. Tretyak1
Принадлежность

1 Institute of High Technologies, Taras Shevchenko National University of Kyiv, 64, Volodymyrska st., 01601 Kyiv, Ukraine

2 Faculty of Radiophysics Electronics and Computer systems, Taras Shevchenko National University of Kyiv, 64, Volodymyrska st., 01601 Kyiv, Ukraine

3 Faculty of Mechanics and Mathematics, Taras Shevchenko National University of Kyiv, 64, Volodymyrska st., 01601 Kyiv, Ukraine

Е-mail mirror@ukr.net
Выпуск Том 9, Год 2017, Номер 1
Даты Получено 13.11.2016, в отредактированной форме – 09.02.2017, опубликовано online – 20.02.2017
Ссылка V.A. Skryshevsky, O.M. Kostiukevych, V.V. Lendiel, O.V. Tretyak, J. Nano- Electron. Phys. 9 No 1, 01023 (2017)
DOI 10.21272/jnep.9(1).01023
PACS Number(s) 73.40.Lq, 73.50.Pz
Ключевые слова Memristor (4) , Titanium oxide, Schottky barrier (8) , Surface electronic states.
Аннотация In present work we developed new memristive devices of sandwich-type Ni/TiOx/p-Si/Ni and planar one Ni/TiOx/p-Si/TiOx/Ni. A pinched hysteresis loop is observed for both device configurations and depends on supplementary illumination by UV/visual light. Besides classical model of migration of oxygen vacancies in titanium oxide we considers the impact of barrier modulation and recharging of surface states in TiOx/Si interface when voltage is applied to the structure in the dark or under illumination. The elaborated heterostructures show great potential as a low cost material for embedding memristive memory for large area electronics, compatible with Si CMOS process and can be managed by external illumination.

Список литературы