Optical Properties of Pure and Eu Doped ZnSe Films Deposited by CSVS Technique

Автор(ы) M.M. Ivashchenko1 , A.S. Opanasyuk2 , I.P. Buryk1, V.A. Lutsenko1, A.V. Shevchenko1
Принадлежность

1 Konotop Institute of Sumy State University, 24, Myru ave., 41615 Konotop, Ukraine

2 Sumy State University, 2, Rimsky-Korsakov str., 40007 Sumy, Ukraine

Е-mail m_ivashchenko@ukr.net
Выпуск Том 9, Год 2017, Номер 1
Даты Получено 28.10.2016, в отредактированной форме – 18.11.2016, опубликовано online – 20.02.2017
Ссылка M.M. Ivashchenko, A.S. Opanasyuk, I.P. Buryk, et al., J. Nano- Electron. Phys. 9 No 1, 01011 (2017)
DOI 10.21272/jnep.9(1).01011
PACS Number(s) 78.20.Ci, 78.30.Fs, 78.66.Hf
Ключевые слова ZnSe (7) , Eu (22) , Optical properties (20) , Vacuum sublimation, Transmittance (7) , Band gap (27) .
Аннотация Pure (ZnSe) and europium doped (ZnSe:Eu) zinc selenide films were evaporated onto glass substrates using the close-spaced vacuum sublimation (CSVS) technique at different deposition conditions (substrate temperature). The fundamental optical parameters such as optical density, extinction coefficient, refraction index, real and imaginary parts of optical dielectric constant, band gap were evaluated in transparent region of transmittance and absorbance spectrum. Optical spectroscopy analysis shown that in both cases deposited films had a high level of transmittance values (55-65 % for ZnSe films and 80-90 % for ZnSe:Eu films). Moreover, evaluated values of the films optical band gap were in the range of Eg  (2.63-2.69) eV for ZnSe films and Eg  (2.77-2.81) eV for ZnSe:Eu for films with increasing of the films substrate temperature. Fourier-transformed infra-red (FTIR) analysis of deposited ZnSe and ZnSe:Eu films shown that all investigated samples are well-crystalline and identified vibrations are typical for II-VI semiconductors.

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