Analog Behavioral Modeling of Schottky Diode Using Spice

Автор(ы) Messaadi Lotfi1, Dibi Zohir2
Принадлежность

1 University of Batna, Advanced Electronic Laboratory (LEA), Avenue Mohamed El-Hadi Boukhlouf, 05000, Batna, Algeria

2 University of Batna, Advanced Electronic Laboratory (LEA), Avenue Mohamed El-Hadi Boukhlouf, 05000, Batna, Algeria

Е-mail lotfi.messaadi@gmail.com
Выпуск Том 9, Год 2017, Номер 1
Даты Получено 17.12.2016, в отредактированной форме – 08.02.2017, опубликовано online – 20.02.2017
Ссылка Messaadi Lotfi, Dibi Zohir, J. Nano- Electron. Phys. 9 No 1, 01002 (2017)
DOI 10.21272/jnep.9(1).01002
PACS Number(s) 73.30. + y, 85.30.Hi
Ключевые слова Silicon carbide (9) , Reverse recovery (3) , Schottky diode (10) , Temperature effect, Modeling (20) , pspice (4) , ABM, Characterization (6) .
Аннотация This paper presents a SiC Schottky diode model including static and dynamic features implemented as a parameterized block constructed from SPICE Analog Behavioral Modeling (ABM) controlled sources. The parameters for this block are easy to extract, even from readily available diode data sheet information. This model can easily simulate the diode’s reverse recovery and power losses behavior over all temperatures from 0 °C to 175 °C.

Список литературы