Investigation of Nanostructure Phase Composition and Field Emission Properties in the Ge/Si (100) System

Автор(ы) S.A. Nepijko1,2 , A.A. Sapozhnik1 , A.G. Naumovets3, Yu.N. Kozyrev3,4, M. Klimenkov5, S.I. Protsenko2, L.V. Odnodvorets2 , I.Yu. Protsenko2

1 Institute of Physics, University of Mainz, 7, Staudingerweg, 55128 Mainz, Germany

2 Sumy State University, 2, Rymskyi-Korsakov Str., 40007 Sumy, Ukraine

3 Institute of Physics, National Academy of Sciences of Ukraine, 46, Nauky Prosp., 03028 Kyiv, Ukraine

4 Institute of Surface Chemistry, National Academy of Sciences of Ukraine, 17, General Naumov Str., 03164 Kiev, Ukraine

5 Institute for Applied Materials, Karlsruhe Institute of Technology, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen, Germany

Выпуск Том 8, Год 2016, Номер 4
Даты Получено 25.11.2016, опубликовано online – 23.12.2016
Ссылка S.A. Nepijko, A.A. Sapozhnik, A.G. Naumovets, et al., J. Nano- Electron. Phys. 8 No 4(2), 04067 (2016)
DOI 10.21272/jnep.8(4(2)).04067
PACS Number(s) 73.22. – f; 73.21.La; 81.15.Hi
Ключевые слова Heterostructures (2) , Phase Composition (3) , Solid Solution (6) , Pseudomorphic layers, Emission Properties (2) .
Аннотация We analyzed the Ge/Si(100) phase composition based on existing literature data and results obtained with high-resolution electron microscopy method. The research confirms formation of solid solutions Ge(Si) in the Ge film and the Si(Ge) in the Si (100) substrate, which are separated by a thin pseudomorphic layer. This conclusion can correctly interpret the phase composition of the heterostructure based on Ge and Si. An array of tips developing on the interface with the tip density of the order 1014 m–2 was visualized. The emission properties of the tips were studied, including electric field strength near their peaks reaching 109 V/m, which causes cold emission.

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