CNTFET-Based Design of a High-Efficient Full Adder Using XOR Logic

Автор(ы) Seyedehsomayeh Hatefinasab
Принадлежность

Payame Noor University of Sari, Panzdah khordad Str., Sari, Iran

Е-mail hatefinasab@gmail.com
Выпуск Том 8, Год 2016, Номер 4
Даты Получено 27.05.2016, в отредактированной форме – 19.12.2016, опубликовано online – 23.12.2016
Ссылка Seyedehsomayeh Hatefinasab, J. Nano- Electron. Phys. 8 No 4(2), 04061 (2016)
DOI 10.21272/jnep.8(4(2)).04061
PACS Number(s) 88.30.rh
Ключевые слова CNTFET (7) , Full adder (2) , Low power, XOR logic, PDP (Power Delay Product).
Аннотация This paper presents a new low power and high speed full adder based on Carbon Nano Tube Field Effect Transistor (CNTFET) technology. This proposed full adder is based on a XOR logic function using 32 nm CNTFET technology. The MOSFET-like CNTFET is applied in this paper to use CMOS (Complementary Metal Oxide Semiconductor) logic gate. The better structure of CNTFET transistors can improve the performance of full adder based on CNTFET technology [1]. The proposed full adder is simulated in different frequencies, various supply voltages, temperatures and load capacitances to prove better performance in different conditions using the Synopsys HSPICE simulator software in comparison with previous full adders in CNTFET technology.

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