Semiholographic Approach in Calculation of Tunneling Current in Graphene with Deep Impurities

Автор(ы) M.B. Belonenko1,2 , N.N. Konobeeva1
Принадлежность

1 Volgograd State University, 400062 Volgograd, Russia

2 Laboratory of Nanotechnology, Volgograd Institute of Business, 400048 Volgograd, Russia

Е-mail belonenko@volsu.ru, yana_nn@volsu.ru
Выпуск Том 8, Год 2016, Номер 4
Даты Получено 18.06.2016, в отредактированной форме – 22.11.2016, опубликовано online – 29.11.2016
Ссылка M.B. Belonenko, N.N. Konobeeva, J. Nano- Electron. Phys. 8 No 4(1), 04029 (2016)
DOI 10.21272/jnep.8(4(1)).04029
PACS Number(s) 73.20. At, 73.22.Pr
Ключевые слова Tunneling current, Deep impurity, Semiholographic approach.
Аннотация In this paper, we investigated the influence of deep impurity in graphene on the tunneling current in the contact with a metal. A ballistic current in graphene was calculated. The dependence of current-voltage characteristic of the contact on transition energy between the impurity and the graphene was analyzed.

Список литературы