Study of Charge Transfer in Semiconducting Rare Earth Chalcogenide Thulium Telluride (TmTe)

Автор(ы) S. Ariponnammal , S.K. Rathiha, S. Chandrasekaran
Принадлежность Department of Physics, Gandhigram Rural Institute, Deemed University, Gandhigram – 624302, Dindigul District, Tamil Nadu, India
Выпуск Том 3, Год 2011, Номер 1, Part 3
Даты Received 04 February 2011, in final form 18 June 2011, published online 23 June 2011
Ссылка S. Ariponnammal, S.K. Rathiha, S. Chandrasekaran, J. Nano- Electron. Phys. 3 No1, 536 (2011)
PACS Number(s) 72.10. – d, 72.15.Qm, 72.20. – i
Ключевые слова Tmte, Chalcogenide (14) , Charge transfer (2) , Valence fluctuation, XRDP.
The study of charge transfer in rare earth chalcogenide semiconductor TmTe has been carried out by using experimental and theoretical X-ray powder diffraction (XRPD) data. The direction and amount of charge transfer are inferred by plotting and comparing the structure factor of the components. Thus, a charge transfer of 0.15 electrons is obtained in TmTe from Tm to Te.

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