Автор(ы) | Yu.I. Shtern, A.A. Sherchenkov , A.V. Babich , M.S. Rogachev |
Принадлежность | National Research University of Electronic Technology, 1, Shokin sq., 124498 Zelenograd, Moscow, Russia |
Е-mail | aa_sherchenkov@rambler.ru |
Выпуск | Том 8, Год 2016, Номер 4 |
Даты | Получено 03.06.2016, в отредактированной форме – 22.11.2016, опубликовано online – 29.11.2016 |
Ссылка | Yu.I. Shtern, A.A. Sherchenkov, A.V. Babich, M.S. Rogachev, J. Nano- Electron. Phys. 8 No 4(1), 04049 (2016) |
DOI | 10.21272/jnep.8(4(1)).04049 |
PACS Number(s) | 72.20.Pa, 65.40. + a |
Ключевые слова | Thermoelectricity (2) , High-temperature (3) , Si0, 8Ge0, 2P0, 022, Nanostructured (3) , Thermoelectric generators, Thermoelement, Multisectional leg. |
Аннотация | Complex investigations of high-temperature thermoelectric material nanostructured Si0.8Ge0.2P0.022 n-type were carried out. Temperature dependencies of conductivity, thermoelectric coefficient and thermal conductivity were studied. Obtained data were used for the calculation of temperature dependence of ZT. Maximum value of ZT 1.04 is observed at 900 °C. Differential scanning calorimetry indicates on the high thermal stability of the nanostructured material. It was established that optimal temperature range for the application of the material in the multisectional legs of thermoelements is 600-900 °C. |
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