A Two Dimensional Surface Potential Model for Triple Material Double Gate Junctionless Field Effect Transistor

Автор(ы) A. Kumar , A. Chaudhry, V. Kumar, V. Sharma

UIET, Panjab University, Sector-14, Chandigarh, India

Е-mail ajaymoudgil01@gmail.com
Выпуск Том 8, Год 2016, Номер 4
Даты Получено 23.09.2016, в отредактированной форме – 22.11.2016, опубликовано online – 29.11.2016
Ссылка A. Kumar, A. Chaudhry, V. Kumar, V. Sharma, J. Nano- Electron. Phys. 8 No 4(1), 04042 (2016)
DOI 10.21272/jnep.8(4(1)).04042
PACS Number(s) 85.30.Tv
Ключевые слова Triple Material Double Gate (TMDG), Junctionless field effect transistor (JLFET), Surface Potential (9) , Centre potential.
Аннотация In this paper, a two dimensional analytical Surface Potential model for the triple material double gate (TMDG) junctionless-field effect transistor (JLFET) in sub-threshold region has been presented. The effect of source and drain depletion width has also been taken into account. We have solved two-dimensional Poisson’s equation for the Surface Potential. Then the centre potential and the electric field is also obtained. We have calculated the surface potential for different channel lengths. All the modelled results are then compared with the simulated results of the 2D device simulator TCAD.

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