Effects of High-k Dielectrics with Metal Gate for Electrical Characteristics of SOI TRI-GATE FinFET Transistor

Автор(ы) Fatima Zohra Rahou, A.Guen Bouazza, B. Bouazza

Department of Electronic and Electrical Engineering, Faculty of Technology, University of Abou-Bekr Belkaid, Tlemcen, Algeria

Е-mail f_rahou@yahoo.fr
Выпуск Том 8, Год 2016, Номер 4
Даты Получено 22.04.2016, в отредактированной форме – 22.11.2016, опубликовано online – 29.11.2016
Ссылка Fatima Zohra Rahou, A.Guen Bouazza, B. Bouazza, J. Nano- Electron. Phys. 8 No 4(1), 04037 (2016)
DOI 10.21272/jnep.8(4(1)).04037
PACS Number(s) 85.30.Tv
Ключевые слова Technology SOI, Short-channel effects (SCEs), Multi-gate SOI MOSFET, SOI TRI-GATE FinFET, High-k dielectric (2) , Silvaco Software.
Аннотация The implementation of high-k gate dielectrics is one of several strategies developed to allow further miniaturization of microelectronic components. From the simulation result; it was shown that HfO2 is the best dielectric material with metal gate TiN, which giving better subthreshold swing (SS), drain-induced barrier lowing (DIBL), leakage current Ioff and Ion/Ioff ratio.

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