Practical Analysis of the Properties of Nanoscale Electronic Elements Aimed at their Application when Designing Parallel Architecture Computing Systems

Автор(ы) M.V. Makarov
Принадлежность

Murom Institute of Vladimir State University, 23, Orlovskaya st., 602264 Murom, Russia

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Выпуск Том 8, Год 2016, Номер 3
Даты Получено 22.04.2016, опубликовано online – 03.10.2016
Ссылка M.V. Makarov, J. Nano- Electron. Phys. 8 No3, 03035 (2016)
DOI 10.21272/jnep.8(3).03023
PACS Number(s) 61.46. – w, 81.07. – b
Ключевые слова Nanoscale electronics, Properties of nanomaterials, Memristors, Parallel computing (2) , Fault tolerance.
Аннотация This article presents an approach to the practical analysis of nanomaterials which determine the reliability parameters of nanoscale electronic hardware components when they are used in developing fault-tolerant high-performance computing systems. We propose a methodology of theoretical and experimental study of the reliability values of the memristor models used as the synaptic connections of an artificial neural network that approximate a differential equation.

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