Thermodynamics of Nucleation of Silicon Carbide Nanocrystals during Carbonization of Porous Silicon

Автор(ы) Yu.S. Nagornov

Institute of Microstructure Technology, Karlsruhe Institute of Technology, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen, Germany

Выпуск Том 8, Год 2016, Номер 3
Даты Получено 14.04.2016, опубликовано online – 03.10.2016
Ссылка Yu.S. Nagornov, J. Nano- Electron. Phys. 8 No 3, 03001 (2016)
DOI 10.21272/jnep.8(3).03001
PACS Number(s) 82.60.Nh, 81.07.Bc, 64.70.Nd
Ключевые слова Thermodynamics of nucleation, SiC nanocrystals, High-temperature carbonization, Porous silicon (3) , Monte Carlo simulation (3) .
Аннотация The formation of SiC nanocrystals of the cubic modification in the process of high-temperature carbonization of porous silicon has been analyzed. It has been shown that the surface energy of silicon nanoparticles and quantum filaments is released in the process of annealing and carbonization. The Monte Carlo simulation has shown that the released energy makes it possible to overcome the nucleation barrier and to form SiC nanocrystals.

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